Transistors SMD Type High-Voltage Driver Applications 2SA1740 Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Collector Current (Pulse) ICP -400 mA Collector Power Dissipation PC * 1.3 W Tj 150 Tstg -55 to +150 Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm2 x 0.8 mm) Electrical Characteristics Ta = 25 Max Unit Collector Cut-off Current Parameter Symbol ICBO VCB = -300V , IE = 0 Testconditons Min Typ -0.1 A Emitter Cut-off Current IEBO VEB = -4V , IC = 0 -0.1 A Collector-Base Breakdown Voltage V(BR)CBO IC = -10uA , IE = 0 -400 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = -1mA , RBE = -400 V Emitter-Base Breakdown Voltage V(BR)EBO IE = -10uA , IC = 0 -5 V DC Current Gain hFE VCE = -10V , IC = -50mA 60 200 Collector-Emitter Saturation Voltage VCE(sat) IC = -50mA , IB = -5mA -0.8 V Base-Emitter Saturation Voltage VBE(sat) IC = -50mA , IB = -5mA -1.0 V VCE = -30V , IC = -10mA 70 MHz Collector Output Capacitance Cob VCB = -30V , IE = 0 , f = 1MHz 5 pF Reverse Transfer Capacitance Cre VCB = -30V , IE = 0 , f = 1MHz 4 pF Turn-On Time ton Turn-Off Time toff Gain-Bandwidth Product fT See Test Circuit. 0.25 ìs 5.0 www.kexin.com.cn 1 Transistors SMD Type 2SA1740 Test Circuit hFE Classification AK Marking Rank hFE D 60 E 120 100 Electrical Characteristics Curves 2 www.kexin.com.cn 200 Transistors SMD Type 2SA1740 www.kexin.com.cn 3