KEXIN 2SA1740

Transistors
SMD Type
High-Voltage Driver Applications
2SA1740
Features
High Breakdown Voltage
Adoption of MBIT Process
Excellent hFE Linearlity.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-200
mA
Collector Current (Pulse)
ICP
-400
mA
Collector Power Dissipation
PC *
1.3
W
Tj
150
Tstg
-55 to +150
Jumction temperature
Storage temperature Range
* Mounted on ceramic board (250 mm2 x 0.8 mm)
Electrical Characteristics Ta = 25
Max
Unit
Collector Cut-off Current
Parameter
Symbol
ICBO
VCB = -300V , IE = 0
Testconditons
Min
Typ
-0.1
A
Emitter Cut-off Current
IEBO
VEB = -4V , IC = 0
-0.1
A
Collector-Base Breakdown Voltage
V(BR)CBO IC = -10uA , IE = 0
-400
V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC = -1mA , RBE =
-400
V
Emitter-Base Breakdown Voltage
V(BR)EBO IE = -10uA , IC = 0
-5
V
DC Current Gain
hFE
VCE = -10V , IC = -50mA
60
200
Collector-Emitter Saturation Voltage
VCE(sat) IC = -50mA , IB = -5mA
-0.8
V
Base-Emitter Saturation Voltage
VBE(sat) IC = -50mA , IB = -5mA
-1.0
V
VCE = -30V , IC = -10mA
70
MHz
Collector Output Capacitance
Cob
VCB = -30V , IE = 0 , f = 1MHz
5
pF
Reverse Transfer Capacitance
Cre
VCB = -30V , IE = 0 , f = 1MHz
4
pF
Turn-On Time
ton
Turn-Off Time
toff
Gain-Bandwidth Product
fT
See Test Circuit.
0.25
ìs
5.0
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Transistors
SMD Type
2SA1740
Test Circuit
hFE Classification
AK
Marking
Rank
hFE
D
60
E
120
100
Electrical Characteristics Curves
2
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200
Transistors
SMD Type
2SA1740
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3