Transistors SMD Type NPN Triple Diffused Planar Silicon Transistor 2SC4003 +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 Excellent hFE linearity +0.15 0.50 -0.15 +0.2 9.70 -0.2 Adoption of MBIT process +0.15 5.55 -0.15 High breakdown voltage 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 400 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 5 V Collector current (DC) IC 200 mA Collector current (Pulse) Icp 400 mA 1 W 10 W Total Power dissipation Ta = 25 PC TC = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SC4003 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit 0.1 ìA 0.1 ìA collector cutoff current ICBO VCB=300V,IE=0 emitter cutoff current IEBO VEB=4V,IC=0 DC current Gain hFE VCE=10V,IC=50mA Gain-Bandwidth Product fT VCE=30V,IC=10mA C-E Saturation Voltage VCE(sat) IC=50mA,IB=5mA B-E Saturation Voltage VBE(sat) IC=50mA,IB=5mA C-B Breakdown Voltage V(BR)CBO IC=10ìA,IE=0 400 V C-E Breakdown Voltage V(BR)CEO IC=1mA,RBE= 400 V E-B Breakdown Voltage V(BR)EBO IE=10ìA,IC=0 5 V Output Capacitance cob VCB=30V,f=1MHz Reverse Transfer Capacitance cre VCB=30V,f=1MHz Turn-ON Time ton Turn-OFF Time toff Switching Time Test Circuit hFE Classification 2 Testconditons Marking D E hFE 60 to 120 100 to 200 www.kexin.com.cn see specified Test Circuit 60 200 70 MHz 0.6 V 1.0 V 4 pF 3 pF 0.25 ìs 5 ìs