KEXIN 2SC4003

Transistors
SMD Type
NPN Triple Diffused Planar Silicon Transistor
2SC4003
+0.15
6.50-0.15
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
TO-252
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
+0.15
4.60-0.15
0.127
max
3 .8 0
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
Excellent hFE linearity
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Adoption of MBIT process
+0.15
5.55 -0.15
High breakdown voltage
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
400
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
5
V
Collector current (DC)
IC
200
mA
Collector current (Pulse)
Icp
400
mA
1
W
10
W
Total Power dissipation Ta = 25
PC
TC = 25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
SMD Type
2SC4003
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
0.1
ìA
0.1
ìA
collector cutoff current
ICBO
VCB=300V,IE=0
emitter cutoff current
IEBO
VEB=4V,IC=0
DC current Gain
hFE
VCE=10V,IC=50mA
Gain-Bandwidth Product
fT
VCE=30V,IC=10mA
C-E Saturation Voltage
VCE(sat)
IC=50mA,IB=5mA
B-E Saturation Voltage
VBE(sat)
IC=50mA,IB=5mA
C-B Breakdown Voltage
V(BR)CBO
IC=10ìA,IE=0
400
V
C-E Breakdown Voltage
V(BR)CEO
IC=1mA,RBE=
400
V
E-B Breakdown Voltage
V(BR)EBO
IE=10ìA,IC=0
5
V
Output Capacitance
cob
VCB=30V,f=1MHz
Reverse Transfer Capacitance
cre
VCB=30V,f=1MHz
Turn-ON Time
ton
Turn-OFF Time
toff
Switching Time Test Circuit
hFE Classification
2
Testconditons
Marking
D
E
hFE
60 to 120
100 to 200
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see specified Test Circuit
60
200
70
MHz
0.6
V
1.0
V
4
pF
3
pF
0.25
ìs
5
ìs