KEXIN 2SB1123

Transistors
SMD Type
High-Current Switching Applications
2SB1123
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-60
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-2
A
Collector current (pulse)
ICP
-4
A
Collector dissipation
PC
0.5
W
1.3
W
Mounted on a ceramic board (250mm250.8mm)
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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Transistors
SMD Type
2SB1123
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = -50V , IE = 0
-100
nA
Emitter-base cutoff current
IEBO
VEB = -4 V , IC = 0
-100
nA
DC current Gain
hFE
VCE = -2V , IC = -100mA
fT
VCE = -10V , IC = -50mA
150
MHz
VCB = -10V , f = 1MHz
22
pF
Gain bandwidth product
Output capacitance
Cob
Testconditons
Typ
100
560
Collector-emitter saturation voltage
VCE(sat) IC = -1A , IB = -50mA
-0.3
-0.7
V
Base-emitter saturation voltage
VBE(sat) IC = -1A , IB = -50mA
-0.9
-1.2
V
Collector-to-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-60
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-50
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-6
V
Turn-ON Time
ton
60
ns
Storage Time
tstg
450
ns
tf
30
ns
Fall Time
hFE Classification
BF
Marking
Rank
hFE
2
Min
R
100
S
200
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140
T
280
200
U
400
280
560