KEXIN 2SC5069

Transistors
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SC5069
Features
High current capacity.
Adoption of MBIT process.
High DC current gain.
Low collector-to-emitter saturation voltage.
High VEBO.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
15
V
Collector current
IC
2
A
Collector current (pulse)
ICP
4
A
Base Current
IB
0.4
A
W
Collector dissipation
PC *
1.5
Junction temperature
Tj
150
Tstg
-55 to +150
Storage temperature
2
* Mounted on ceramic board(250mm X0.8mm).
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Transistors
SMD Type
2SC5069
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current gain
hFE
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Min
Typ
VCB = 20 V, IE=0
VEB = 10 V, IC=0
VCE = 5 V , IC = 500 mA
800
VCE = 5 V , IC = 1A
600
1500
Max
Unit
100
ìA
100
ìA
3200
fT
VCE = 10 V , IC = 50 mA
260
MHz
Cob
VCB = 10V , f = 1.0MHz
27
pF
VCE(sat) IC = 1A , IB = 20 mA
VBE(sat) IC = 1A , IB = 20 mA
0.15
0.5
0.85
1.2
V
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
30
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
25
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
15
V
Turn-ON Time
ton
0.14
ìs
Strange Time
tstg
1.35
ìs
tf
0.1
ìs
Fall Time
Marking
Marking
2
Testconditons
CU
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