Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 15 V Collector current IC 2 A Collector current (pulse) ICP 4 A Base Current IB 0.4 A W Collector dissipation PC * 1.5 Junction temperature Tj 150 Tstg -55 to +150 Storage temperature 2 * Mounted on ceramic board(250mm X0.8mm). www.kexin.com.cn 1 Transistors SMD Type 2SC5069 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain hFE Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Min Typ VCB = 20 V, IE=0 VEB = 10 V, IC=0 VCE = 5 V , IC = 500 mA 800 VCE = 5 V , IC = 1A 600 1500 Max Unit 100 ìA 100 ìA 3200 fT VCE = 10 V , IC = 50 mA 260 MHz Cob VCB = 10V , f = 1.0MHz 27 pF VCE(sat) IC = 1A , IB = 20 mA VBE(sat) IC = 1A , IB = 20 mA 0.15 0.5 0.85 1.2 V V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 30 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 25 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 15 V Turn-ON Time ton 0.14 ìs Strange Time tstg 1.35 ìs tf 0.1 ìs Fall Time Marking Marking 2 Testconditons CU www.kexin.com.cn