KEXIN 2SC4080

Transistors
SMD Type
NPN Epitaxial Planar Silicon Transistors
2SC4080
Features
High Ft
High breakdown voltage
Small reverse transfer capacitance excellent
high-frequency characteristic
Adoption of FBET prccess
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
collector-base voltage
VCBO
200
V
collector-emitter voltage
VCEO
200
V
emitter-base voltage
VEBO
4
V
collector current
IC
100
mA
Collector Current (pulse)
ICP
200
mA
Collector Dissipation
PC
500
mA
1.3
W
Junotion Temperature
TJ
150
Tstg
-55 to 150
storage Temperature
2
*Mounted on ceramic board (250mm X0.8mm)
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Transistors
SMD Type
2SC4080
Electrical Characteristics Ta = 25
Max
Unit
collector cutoff Current
Parameter
Symbol
ICBO
VCB=150V,IE=0
Testconditons
0.1
ìA
Emitter cutoff current
IEBO
VEB=2V,IC=0
1.0
ìA
DC Current Gain
hFE
VCE=10V,IC=10mA
40
VCE=10V,IC=100mA
20
Typ
320
Gain-Bandwidth product
fT
VCE=30V,IC=30mA
400
MHz
Output Capacitance
cob
VCB=30V,f=1MHz
1.8
pF
Reverse Transfer
cre
VCB=30V,f=1MHz
1.4
Collector to Emitter Saturation Voltage
VCE(sat)
IC=20mA,IB=2mA
1
V
Base to Emitter Stauration Voltage
VBE(sat)
IC=20mA,IB=2mA
1
V
Collector to Base Breakdown Voltage
V(BR)CBO
IC=10ìA,IE=0
200
Collector to Emitter Breakdown Voltage
V(BR)CEO
IC=1mA,IB=0
200
V
Emitter to Base Breakdown Voltage
V(BR)EBO
IE=100ìA,IC=0
4
V
hFE Classification
CI
Marking
2
Min
Rank
C
D
E
F
Type
40 to 80
60 to 120
100 to200
160 to 320
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