Transistors IC SMD Type Medium Power Amplifier 2SA1979UF Features Large collector current. Suitable for low-Voltage operation because of its low saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -40 V Collector-emitter voltage VCEO -32 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA Collector dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-100ìA, IE=0 -40 V Collector-emitter breakdown voltage BVCEO IC=-1mA, IB=0 -32 V Emitter-base breakdown voltage -5 BVEBO IE=-10ìA, IC=0 Collector cutoff current ICBO VCB=-40V, IE=0 -0.1 ìA Emitter cutoff current IEBO VEB=-5V, IC=0 -0.1 ìA hFE VCE=-1V, IC=-100mA DC current transfer ratio V 70 240 VCE(sat) IC=-100mA, IB=-10mA Collector-emitter saturation voltage Transition frequency fT Output capacitance Cob -0.25 V VCE=-6V, IC=-20mA 200 MHz VCB=-6V, IE=0, f=1MHz 7.5 pF hFE Classification A Marking Rank O Y hFE 70 140 120 240 www.kexin.com.cn 1