Transistors SMD Type Strobe High-Current Switching Applications 2SB1205 TO-252 Features 6.50 +0.2 5.30-0.2 Low saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Large current capacity. +0.15 5.55 -0.15 Fast switching speed. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -25 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -5 A Collector current (pulse) ICP -8 A Base current IB -0.5 A 1 W 10 W Collector dissipation PC TC = 25 Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SB1205 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit Collector cutoff current ICBO VCB = -20V , IE = 0 -500 ìA Emitter cutoff current IEBO VEB = -4V , IC = 0 -500 ìA DC current Gain hFE Gain bandwidth product fT Output capacitance Cob VCE = -2V , IC = -500mA 100 VCE = -2V , IC = -4A 60 400 VCE = -5V , IC = -200mA 320 MHz VCB = -10V , f = 1MHz 60 pF Collector-emitter saturation voltage VCE(sat) IC = -3A , IB = -60mA -250 -500 mV Base-to-emitter saturation voltage VBE(sat) IC = -3A , IB = -60mA -1 -1.3 V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -25 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -20 V IE = -10ìA , IC = 0 -5 V Emitter-to-base breakdown voltage V(BR)EBO Turn-on time ton 40 ns Storage time tstg 200 ns tf 10 ns Fall time hFE Classification 2 Min Rank R S T hFE 100 200 140 280 200 400 www.kexin.com.cn