Transistors SMD Type PNP Epitaxial Planar Silicon Transistor 2SA1257 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small output capacitance. 0.55 High breakdown voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -180 V Collector-emitter voltage VCEO -160 V Emitter-base voltage VEBO -5 V Collector current IC -80 mA Collector current (pulse) ICP -150 mA Collector dissipation PC 200 mW Jumction temperature Tj 125 Storage temperature Tstg -55 to +125 www.kexin.com.cn 1 Transistors SMD Type 2SA1257 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol IcBO VCB = -120V , IE = 0 -0.1 ìA Emitter cutoff current IEBO VEB = -4V , IC = 0 -0.1 ìA DC current Gain hFE VCE = -5V , IC = -10 mA fT VCE = -10V , IC = -10 mA 130 Cob VCB = -10V , f = 1MHz 2.4 VBE VCE = -5V , IC = -10 mA Gain bandwidth product Output capacitance Base-emitter voltage Collector-emitter saturation voltage Testconditons Typ 60 270 VCE(sat) IC = -30mA , IB = -3mA MHz 3.2 pF -1.5 V -0.7 V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -180 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -160 V Emitter-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -5 V Turn-on time ton 0.15 ìs Storage time tstg 0.95 ìs tf 0.15 ìs Fall time hFE Classification 2 Min Rank G3 G4 G5 hFE 60 120 90 180 135 270 www.kexin.com.cn