KEXIN 2SC3650

Transistors
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SC3650
Features
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage
(VCE(sat)
0.5V).
Large current capacity (IC=1.2V).
Very small size making it easy to provide highdensity,
small-sized hybrid IC’
s.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
15
V
Collector current
IC
1.2
A
Collector current (pulse)
Icp
2
A
mW
Collector dissipation
PC
500
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB=20V, IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB=10V, IC=0
0.1
ìA
DC current gain
hFE
VCE=5V, IC=500mA
fT
VCE=10V, IC=50mA
220
MHz
Cob
VCB=10V, f=1MHz
17
pF
Gain bandwidth product
Output capacitance
Testconditons
Min
800
Typ
1500
3200
Collector-emitter saturation voltage
VCE(sat) IC=500mA, IB=10mA
0.12
0.5
V
Base-emitter saturation voltage
VBE(sat) IC=500mA, IB=10mA
0.85
1.2
V
Collector-base breakdown voltage
V(BR)CBO IC=10ìA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, RBE=
25
V
Emitter-base breakdown voltage
V(BR)EBO IE=10ìA, IC=0
15
V
30
V
Marking
Marking
CF
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