Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC3651 Features High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO (VEBO 15V) Very small size making it easy to provide high-density small-sized hybrid IC's. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit collector-base voltage Parameter VCBO 120 V collector-emitter voltage VCEO 100 V emitter-base voltage VEBO 15 V collector current IC 200 mA Collector Current (pulse) ICP 300 mA Collector Dissipation PC 500 mA 1.3 * W Junotion Temperature TJ 150 storage Temperature Tstg -55 to 150 *Mounted on ceramic board (250mm2X0.8mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit collector cutoff Current ICBO VCB=80V,IE=0 0.1 ìA Emitter cutoff current IEBO VEB=10V,IC=0 0.1 ìA DC Current Gain hFE VCE=5V,IC=10mA 500 VCE=5V,IC=100mA 400 1000 2000 fT VCE=10V,IC=10mA 150 MHz cob VCB=10V,f=1MHz 6.5 pF Collector to Emitter Saturation Voltage VCE(sat) IC=100mA,IB=2mA 0.15 Base to Emitter Stauration Voltage VBE(sat) IC=100mA,IE=2mA V V Gain-Bandwidth product Output Capacitance 0.5 V Collector to Base Breakdown Voltage V(BR)CBO IC=100ìA,IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO IC=1mA,IB=0 V Emitter to Base Breakdown Voltage V(BR)EBO IE=10ìA,IC=0 V Marking Marking CG www.kexin.com.cn 1