Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4705 Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage : VCE(sat) 0.5V max. High VEBO : VEBO 15V. Small size making it easy to provide high-density, hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 15 V Collector current IC 200 mA Collector current (pulse) ICP 300 mA Base current IB 40 mA Collector dissipation,mounted on ceramic board(250mm2X0.8mm) PC 1.3 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SC4705 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector cutoff current ICBO VCB = 40V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB = 10V, IC=0 0.1 ìA DC current gain hFE VCE = 5V , IC = 100mA fT VCE = 10V , IC = 10mA 250 MHz Cob VCB = 10V , f = 1.0MHz 4 pF Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage 800 VCE(sat) IC = 100 mA , IB = 2 mA VBE(sat) IC = 100 mA , IB = 2 mA 1500 3200 0.12 0.5 0.85 1.2 V V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 60 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 50 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 15 V Marking Marking 2 Testconditons CP www.kexin.com.cn