KEXIN 2SC4705

Transistors
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SC4705
Features
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage :
VCE(sat)
0.5V max.
High VEBO : VEBO
15V.
Small size making it easy to provide high-density,
hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
15
V
Collector current
IC
200
mA
Collector current (pulse)
ICP
300
mA
Base current
IB
40
mA
Collector dissipation,mounted on ceramic
board(250mm2X0.8mm)
PC
1.3
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
SMD Type
2SC4705
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 40V, IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB = 10V, IC=0
0.1
ìA
DC current gain
hFE
VCE = 5V , IC = 100mA
fT
VCE = 10V , IC = 10mA
250
MHz
Cob
VCB = 10V , f = 1.0MHz
4
pF
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
800
VCE(sat) IC = 100 mA , IB = 2 mA
VBE(sat) IC = 100 mA , IB = 2 mA
1500
3200
0.12
0.5
0.85
1.2
V
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
60
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
50
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
15
V
Marking
Marking
2
Testconditons
CP
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