Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1302 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -5 A Collector current (pulse) ICP -8 A Collector dissipation PC 1.3 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SB1302 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = -20V , IE = 0 Emitter cutoff current IEBO VEB = -4V , IE = 0 DC current Gain hFE VCE = -2V , IC = -500mA fT VCE = -5V , IC = -200mA Gain bandwidth product Output capacitance 100 Max Unit -500 nA -500 nA 400 320 VCB = -10V , f = 1MHz Cob Typ MHz 60 pF Collector-emitter saturation voltage VCE(sat) IC = -3A , IB = -60mA -250 -500 V Base-emitter saturation voltage VBE(sat) IC = -3A , IB = -60mA -1 -1.3 V Collector-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -25 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -20 V Emitter-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -5 Turn-on time ton 40 ns Storage time tstg 200 ns tf 10 ns Fall time hFE Classification BJ Marking Rank hFE 2 Min R 100 S 200 www.kexin.com.cn 140 T 280 200 400