Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1574 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 Possible to tsolder radiation fin directly to printed circuit boad. 0.127 max Large collector current IC. +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25 2.65 -0.1 High collector-emitter voltage (Base open) VCEO. +0.28 1.50 -0.1 +0.2 9.70 -0.2 High collector-base voltage (Emitter open) VCBO. +0.15 0.50 -0.15 Type with universal characteristics. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -2 A Peak collector current ICP -3 A Collector power dissipation PC 10 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = -10 ìA, IE = 0 -50 Collector-emitter voltage VCEO IC = -1 mA, IB = 0 -50 V Emitter-base voltage VEBO IE = -10 ìA, IC = 0 -5 V Collector-base cutoff curent ICBO VCB = -10 V,IE = 0 Forward current transfer ratio hFE V -0.1 VCE = -2 V, IC = -200 mA 120 VCE = -2 V, IC = -1A 60 340 Collector-emitter saturation voltage VCE(sat) IC = -1 A, IB = -50 mA -0.2 -0.3 Base-emitter saturation voltage VBE(sat) IC = -1 A, IB = -50 mA -0.85 -1.2 Transition frequency fT Collector output capacitance Cob VCE = -10 V, IC = -50 mA , f = 200 MHz 80 VCB = -10V , IE = 0 , f = 1.0MHz 45 ìA V V V MHz 60 pF hFE Classification Rank R S hFE 120 240 170 340 www.kexin.com.cn 1