Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB967 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Possible to solder the radiation fin directly to printed cicuit board. +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 Large collector current IC. +0.15 0.50 -0.15 Low collector-emitter saturation voltage VCE(sat). 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -27 V Collector-emitter voltage VCEO -18 V Emitter-base voltage VEBO -7 V Collector current IC -5 A Peak collector current ICP -8 A Collector power dissipation PC 20 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Collector-base cutoff curent Testconditons ICBO VCB = -10 V,IE = 0 Min Typ Max Unit -100 nA -1 ìA Emitter-base cutoff current IEBO VEB = -5 V, IC = 0 Collector-emitter voltage VCEO IC = -1mA, IB = 0 -18 V Emitter-base voltage VEBO IE = -10 ìA, IC = 0 -7 V VCE = -2 V, IC = 2 A 90 Forward current transfer ratio hFE Collector-emitter saturation voltage 625 VCE(sat) IC = -3 A, IB = -0.1 A Transition frequency fT Collector output capacitance Cob VCE = -6 V, IE = -50 mA , f = 200 MHz VCB = -20V , IE = 0 , f = 1.0MHz -1 120 V MHz 85 pF hFE Classification Rank P Q R hFE 90 135 125 205 180 625 www.kexin.com.cn 1