Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1220 Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -150 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Peak collector current ICP -100 mA Collector current IC -50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter voltage VCEO IC = -100 ìA, IB = 0 -150 V Emitter-base voltage VEBO IE = -10 ìA, IC = 0 -5 V Collector-base cutoff current ICBO VCB = -100 V, IE = 0 Forward current transfer ratio hFE VCE = -5 V, IC = -10 mA Collector-emitter saturation voltage -1 130 VCE(sat) IC = -30 mA, IB = -3 mA Transition frequency fT VCB = -10 V, IE = 10 mA, f = 200 MHz Collector output capacitance Cob VCB = -10 V, IE = 0, f = 1 MHz Noixe voltage NV Rg = 100KÙ, Function = FLAT VCE = -10 V, IC = -1 mA, GV = 80 dB, ìA 450 -1 V 200 MHz 4 pF 150 mV hFE Classification I Marking Rank R S T hFE 130 220 185 330 260 450 www.kexin.com.cn 1