KEXIN 2SB1220

Transistors
SMD Type
Silicon PNP Epitaxial Planar Type
2SB1220
Features
High collector-emitter voltage VCEO
Low noise voltage NV
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-150
V
Collector-emitter voltage
VCEO
-150
V
Emitter-base voltage
VEBO
-5
V
Peak collector current
ICP
-100
mA
Collector current
IC
-50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-emitter voltage
VCEO
IC = -100 ìA, IB = 0
-150
V
Emitter-base voltage
VEBO
IE = -10 ìA, IC = 0
-5
V
Collector-base cutoff current
ICBO
VCB = -100 V, IE = 0
Forward current transfer ratio
hFE
VCE = -5 V, IC = -10 mA
Collector-emitter saturation voltage
-1
130
VCE(sat) IC = -30 mA, IB = -3 mA
Transition frequency
fT
VCB = -10 V, IE = 10 mA, f = 200 MHz
Collector output capacitance
Cob
VCB = -10 V, IE = 0, f = 1 MHz
Noixe voltage
NV
Rg = 100KÙ, Function = FLAT
VCE = -10 V, IC = -1 mA, GV = 80 dB,
ìA
450
-1
V
200
MHz
4
pF
150
mV
hFE Classification
I
Marking
Rank
R
S
T
hFE
130 220
185 330
260 450
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