Transistors IC SMD Type Silicon PNP Epitaxial 2SB831 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low frequency amplifier. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -25 V Collector to emitter voltage VCEO -20 V Emitter to base voltage VEBO -5 V Collector current IC -0.7 A peak collector current ICP 1 A mW Collector power dissipation PC 150 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = -10 ìA, IE = 0 -25 Collector to emitter breakdown voltage V(BR)CEO IC = -1 mA, RBE = -20 V Emitter to base breakdown voltage V(BR)EBO IE = -10 ìA, IC = 0 -5 V Collector cutoff current DC current transfer ratio * Collector to emitter saturation voltage * ICBO VCB = -20 V, IE = 0 hFE VCE = -1 V, IC = -0.15 A VCE(sat) IC = -0.5 A, IB = -0.05 A Base to emitter voltage * VBE VCE = -1 V, IC = -0.15 A V -1 85 mA 240 -0.5 V -1 V * Pulse test. hFE Classification Marking BB BC hFE 85 170 120 240 www.kexin.com.cn 1