Transistors IC SMD Type Silicon NPN Epitaxial 2SC4366 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Low Frequency amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 15 V Collector current IC 300 mA Collector dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 60 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 50 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 15 V Collector cutoff current ICBO VCB = 50V, IE=0 Base-emitter voltage VBE VCE = 6V , IC = 1mA DC current gain hFE VCE = 6V , IC = 100mA Collector-emitter saturation voltage VCE(sat) IC = 300mA , IB = 30mA 800 1 ìA 0.75 V 2000 0.3 V Marking Marking ZI- www.kexin.com.cn 1