KEXIN 2SC2618

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC2618
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Low frequency amplifier.
1
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
35
V
Collector-emitter voltage
VCEO
35
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
500
mA
Collector dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
35
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
35
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
4
V
Collector cutoff current
DC current gain
ICBO
VCB = 20V, IC = 0
hFE1
VCE = 3V , IC = 10mA
100
hFE2
VCE = 3V , IC = 500mA
10
VCE(sat) IC = 150mA , IB = 15mA
Collector-emitter saturation voltage
Base-emitter voltage
VBE
VCE = 3V , IC = 10mA
0.5
ìA
320
0.2
0.64
0.6
V
V
hFE Classification
Marking
RC
RD
hFE
100 200
160 320
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