Transistors IC SMD Type Silicon NPN Epitaxial 2SD1101 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low Frequency amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current Collector peak current IC 0.7 A iC(peak) 1 A PC 150 mW Collector dissipation Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 25 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 20 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 Collector cutoff current ICBO VCB = 20V, IE=0 DC current gain hFE VCE = 1V , IC = 0.15A Collector-emitter saturation voltage Base-emitter voltage V 1.0 85 ìA 240 VCE(sat) IC = 0.5A , IB = 0.05A 0.5 V VCE = 1V , IC = 0.15A 1.0 V VBE hFE Classification Marking AB AC hFE 85 170 120 240 www.kexin.com.cn 1