Transistors IC SMD Type Silicon NPN Epitaxial 2SC2463 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low frequency amplifier. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 55 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 55 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 50 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 V Collector cutoff current ICBO VCB = 30V, IE=0 0.5 ìA Emitter cutoff current IEBO VEB = 2V, IC=0 0.5 ìA hFE VCE = 12V , IC = 2mA DC current gain VCE(sat) IC = 10mA , IB = 1mA Collector-emitter saturation voltage Base-emitter voltage VBE VCE = 12V , IC = 2mA 250 1200 0.5 V 0.75 V hFE Classification Marking DD DE DF hFE 250 500 400 800 600 1200 www.kexin.com.cn 1