Transistors IC SMD Type Silicon NPN Epitaxial 2SC2732 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 UHF frequency converter 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 4 V Collector current IC 20 mA mW Collector power dissipation PC 150 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 30 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 25 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 4 V Collector cutoff current ICBO Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product VCB = 10V, IC = 0 VCE(sat) IC = 10 mA, IB = 1 mA hFE VCE = 10 V, IC = 3 mA 30 60 fT VCE = 10 V, IC = 5 mA 700 1000 0.5 ìA 5 V MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 0.5 0.8 pF Conversion gain CG VCC = 12 V, IC = 1 mA,f = 900 MHz, fosc = 930 MHz (0dBm) ,f = 30 MHz 7.0 dB Noise figure NF VCC = 12 V, IC = 1 mA, f = 900 MHz, fosc = 930 MHz (0dBm) , fout = 30 MHz 10.0 dB Marking Marking EC www.kexin.com.cn 1