KEXIN 2SC2732

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC2732
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
0.55
UHF frequency converter
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
20
mA
mW
Collector power dissipation
PC
150
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
30
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
25
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
4
V
Collector cutoff current
ICBO
Collector to emitter saturation voltage
DC current transfer ratio
Gain bandwidth product
VCB = 10V, IC = 0
VCE(sat) IC = 10 mA, IB = 1 mA
hFE
VCE = 10 V, IC = 3 mA
30
60
fT
VCE = 10 V, IC = 5 mA
700
1000
0.5
ìA
5
V
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
0.5
0.8
pF
Conversion gain
CG
VCC = 12 V, IC = 1 mA,f = 900 MHz,
fosc = 930 MHz (0dBm) ,f = 30 MHz
7.0
dB
Noise figure
NF
VCC = 12 V, IC = 1 mA, f = 900 MHz,
fosc = 930 MHz (0dBm) , fout = 30 MHz
10.0
dB
Marking
Marking
EC
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