IC SMD Type Product specification 2SC2736 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 30 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 20 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 3 V Collector cutoff current ICBO Collector to emitter saturation voltage VCB = 15V, IC = 0 hFE VCE = 10 V, IC = 5 mA Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz fT Oscillating output voltage VCE = 10 V, IC = 5 MA 30 0.7 V 200 1.0 1400 pF 2200 MHz 22.5 dB CG1 VCC = 12 V, IC = 2 mA,f = 200 MHz, fOSC = 230 MHz (0dBm) CG2 VCC = 12 V, IC = 2 mA,f = 900 MHz, fOSC = 930 MHz (0dBm),fOut = 30 MHz 10 dB NF VCC = 12 V, IC = 2 mA, f = 200 MHz, fOSC = 230 MHz (0dBm) 4.0 dB VOSC1 VCC = 12 V, IC = 7 mA, f = 300 MHz 300 mV VOSC2 VCC = 12 V, IC = 7 mA, fOSC = 930 MHz 200 mV Conversion gain Noise figure nA VCE(sat) IC = 10 mA, IB = 5 mA DC current transfer ratio Gain bandwidth product 500 Marking Marking TC http://www.twtysemi.com [email protected] 4008-318-123 1 of 1