KEXIN 2SB906

Transistors
SMD Type
Silicon PNP Epitaxial
2SB906
TO-252
Features
6.50
+0.2
5.30-0.2
Low collector saturation voltage.
Unit: mm
2.30
+0.1
-0.1
+0.15
1.50 -0.15
+0.15
-0.15
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
High power dissipation.
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-60
V
Collector-emitter voltage
VCEO
-60
V
Emitter-base voltage
VEBO
-7
V
IC
-3
mA
Base current
IB
-0.5
mA
Collector power dissipation
PC
1
mW
Junction temperature
Tj
150
Tstg
-55 to +150
Collector current
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB = -60 V, IE = 0
-100
ìA
Emitter cut-off current
IEBO
VEB = -7 V, IC = 0
-100
ìA
V(BR)CEO IC=-50mA, IB=0
Collector-emitter breakdown voltage
DC current gain
hFE
Collector-emitter saturation voltage
-60
VCE = -5 V, IC = -0.5 A
60
VCE = -5 V, IC = -3 A
20
VCE (sat) IC = -3 A, IB = -0.3 A
V
200
-1
-1.7
-1.5
V
Base-emitter voltage
VBE
VCE = -5V, IC =-0.5 A
-1
Transition frequency
fT
VCE = -5V, IC =-0.5 A
9
MHz
150
pF
0.4
ìs
1.7
ìs
0.5
ìs
Collector output capacitance
Cob
Turn-on time
ton
Storage time
tstg
Fall time
tf
VCB = -10V, IE = 0, f = 1 MHz
-IB1=IB2=0.2A,VCC=-30V,duty cycle1%
V
hFE Classification
Rank
O
Y
hFE
60 120
100 200
www.kexin.com.cn
1