Transistors SMD Type Silicon PNP Epitaxial 2SB906 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector saturation voltage. Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High power dissipation. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -7 V IC -3 mA Base current IB -0.5 mA Collector power dissipation PC 1 mW Junction temperature Tj 150 Tstg -55 to +150 Collector current Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = -60 V, IE = 0 -100 ìA Emitter cut-off current IEBO VEB = -7 V, IC = 0 -100 ìA V(BR)CEO IC=-50mA, IB=0 Collector-emitter breakdown voltage DC current gain hFE Collector-emitter saturation voltage -60 VCE = -5 V, IC = -0.5 A 60 VCE = -5 V, IC = -3 A 20 VCE (sat) IC = -3 A, IB = -0.3 A V 200 -1 -1.7 -1.5 V Base-emitter voltage VBE VCE = -5V, IC =-0.5 A -1 Transition frequency fT VCE = -5V, IC =-0.5 A 9 MHz 150 pF 0.4 ìs 1.7 ìs 0.5 ìs Collector output capacitance Cob Turn-on time ton Storage time tstg Fall time tf VCB = -10V, IE = 0, f = 1 MHz -IB1=IB2=0.2A,VCC=-30V,duty cycle1% V hFE Classification Rank O Y hFE 60 120 100 200 www.kexin.com.cn 1