Transistors IC SMD Type Silicon NPN Epitaxial 2SC4666 Features High hFE: hFE = 600 3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Small package 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 150 mA Collector current Base current IB 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 ìA DC current gain hFE VCE = 6 V, IC = 2 mA 600 VCE (sat) IC = 100 mA, IB = 10 mA Collector-emitter saturation voltage Transition frequency Collector output capacitance 0.12 V MHz VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF NF(1) VCE = 6 V, IC = 0.1 mA, f = 100 Hz,Rg = 10 kÙ 0.5 dB NF(2) VCE = 6 V, IC = 0.1 mA, f = 1 kHz,Rg = 10 kÙ 0.3 dB Cob Noise figure 100 0.25 250 fT VCE = 10 V, IC = 10 mA 3600 hFE Classification P Marking Rank A B hFE 600 1800 1200 3600 www.kexin.com.cn 1