Transistors IC SMD Type Silicon NPN Epitaxial 2SC3325 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High voltage: VCEO = 50 V (min). 1 Small package. 0.55 Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation PC 200 mW Junction temperature Storage temperature range Tj 150 Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 ìA hFE (1) DC current gain VCE = 1 V, IC = 100 mA 70 hFE (2) * VCE = 6 V, IC = 400 mA 25 VCE (sat) IC = 100 mA, IB = 10 mA Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance 240 0.1 0.25 V 1 V VBE VCE = 1 V, IC = 100 mA 0.8 fT VCE = 6 V, IC = 20 mA 300 MHz 7 pF Cob VCB = 6 V, IE = 0, f = 1 MHz * classification O: 25 (min), Y: 40 (min). hFE Classification CE Marking Rank O Y hFE 70 140 120 240 www.kexin.com.cn 1