Transistors IC SMD Type Silicon NPN Epitaxial 2SC3123 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Reverse Transfer Capacitance : Cre=0.4F(TYP.) 0.55 High Conversion Gain :Gce=23dB(TYP.) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V IC 50 mA Collector current Base current IB 25 mA Collector Power Dissipation PC 150 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature Range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 25V, IE = 0 100 nA Emitter cut-off current IEBO VEB = 3V, IC = 0 1000 nA Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 DC current gain hFE VCE = 10 V, IC = 5mA Reverse Transfer Capacitance Cre VCB=10V,IE=0,f=1MHz fT VCE = 10 V, IC = 5mA Transition Frequency Conversion Gain Gce Noise Figure NF VCC=12V,fL=260MHz,f=200MHZ 20 40 900 20 V 150 300 0.4 0.5 1400 MHz 23 3.8 pF dB 5.5 dB Marking Marking HE www.kexin.com.cn 1