Transistors IC SMD Type Silicon Pnp Epitaxial Planar Type 2SA1245 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -8 V Emitter-Base Voltage VEBO -2 V IC -30 mA Collector Current Base Current IB -15 mA Collector Power Dissipation PC 150 Mw Junction Temperature Tj 125 Tstg -55 to 125 Storage Temperature Range Electrical Characteristics Ta = 25 Parameter Symbol Max Unit Collector Cut-off Current ICBO VCB=-5V;IE=0 -0.1 ìA Emitter Cut-off Current IEBO VEB=-1V;IC=0 -0.1 ìA DC Current Gain hFE VCE=-5V;IC=-10mA Output Capacitance Cob Reserve Transfer Capacitance Cre Transition Frequency Ft VCB=-5V;IE=0;f=1MHz VCE=-5V;IC=-10mA 2 |S2le| (1) Insertion Gain Testconditons VCE=-5V;IC=-10mA;f=500MHz 2 |S2le| (2) VCE=-5V;IC=-10mA;f=1GHz Noise Figure Min Typ 20 0.75 pF 0.60 pF 4 GHz 14 dB 9.5 dB NF(1) VCE=-5V;IC=-3mA;f=500MHz 2.5 dB NF(2) VCE=-5V;IC=-3mA;f=1GHz 3.0 dB Marking Marking MD www.kexin.com.cn 1