Transistors IC SMD Type Silicon NPN Epitaxial 2SC3011 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure: NF=2.3dB(Typ.) f=1GHz 1 High fT : fT=6.5GHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 3 V IC 30 mA Collector current Emitter current IE 10 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain ICBO VCB = 10 V, IE = 0 IEBO VEB = 1.0 V, IC = 0 V(BR)CEO IC = 0.5 mA, IB = 0 hFE VCE = 5 V, IC = 10 mA Collector-emitter saturation voltage VCE (sat) Base-emitter saturation voltage VBE (sat) Collector output capacitance Cob Reverse Transfer Capacitance Cre Input Capacitance Cib Transition Frequency Testconditons IC = 10 mA, IB = 1mA VCB = 5 V, IE = 0, f = 1 MHz fT 2 Insertion Gain |S21e| Noise Figure NF Min Typ Max Unit 1.0 ìA 1.0 ìA 7 30 V 120 0.1 V 0.87 V 0.7 0.9 pF 0.5 pF VEB=0,IC=0,f=1MHZ 0.8 pF VCE=5V,IC=10mA 6.5 GHz VCE=5V,IC=10mA,f=1GHZ 12 dB VCE=5V,IC=5mA,f=1GHz 2.3 dB Marking Marking MA www.kexin.com.cn 1