KEXIN 2SC3011

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC3011
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Low Noise Figure: NF=2.3dB(Typ.) f=1GHz
1
High fT : fT=6.5GHz
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
High Gain :|S21e|2=12dB(TYP.)
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
7
V
Emitter-base voltage
VEBO
3
V
IC
30
mA
Collector current
Emitter current
IE
10
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1.0 V, IC = 0
V(BR)CEO IC = 0.5 mA, IB = 0
hFE
VCE = 5 V, IC = 10 mA
Collector-emitter saturation voltage
VCE (sat)
Base-emitter saturation voltage
VBE (sat)
Collector output capacitance
Cob
Reverse Transfer Capacitance
Cre
Input Capacitance
Cib
Transition Frequency
Testconditons
IC = 10 mA, IB = 1mA
VCB = 5 V, IE = 0, f = 1 MHz
fT
2
Insertion Gain
|S21e|
Noise Figure
NF
Min
Typ
Max
Unit
1.0
ìA
1.0
ìA
7
30
V
120
0.1
V
0.87
V
0.7
0.9
pF
0.5
pF
VEB=0,IC=0,f=1MHZ
0.8
pF
VCE=5V,IC=10mA
6.5
GHz
VCE=5V,IC=10mA,f=1GHZ
12
dB
VCE=5V,IC=5mA,f=1GHz
2.3
dB
Marking
Marking
MA
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