Transistors IC SMD Type Silicon NPN Epitaxial 2SC2714 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) 0.55 Small reverse transfer capacitance: Cre = 0.7 pF (typ.) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 20 mA Emitter current IE 4 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature range Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter Symbol ICBO VCB = 18 V, IE = 0 0.5 ìA Emitter cut-off current IEBO VEB = 4 V, IC = 0 0.5 ìA DC current gain hFE VCE = 6 V, IC = 1 mA Reverse transfer capacitance Cre VCB = 6 V, f = 1 MHz 0.70 pF fT VCE = 6 V, IC = 1 mA 550 MHz Transition frequency Collector-base time constant Testconditons Min Typ 40 200 Cc.rbb' Noise figure NF Power gain Gpe VCE = 6 V, IE = -1 mA, f = 100 MHz, 2.5 17 23 30 ps 5.0 dB dB hFE Classification Marking QR QO QY Rank R O Y hFE 40 80 70 140 100 200 www.kexin.com.cn 1