Transistors IC SMD Type Silicon NPN Epitaxial 2SC4215 Features Small reverse transfer capacitance: Cre = 0.55 pF (typ.) Low noise figure: NF = 2dB (typ.) (f = 100 MHz) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 20 mA Base current IB 4 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cut-off current ICBO VCB = 40 V, IE = 0 Emitter cut-off current IEBO VEB = 4 V, IC = 0 DC current gain hFE VCE = 6 V, IC = 1 mA Reverse transfer capacitance Cre VCB = 10 V, f = 1MHz fT VCE = 6 V, IC = 1 mA Transition frequency Collector-base time constant Min Typ 40 NF Power gain Gpe Unit 0.1 ìA 0.5 ìA 200 0.55 260 2 VCC = 6V, IE = -1mA, f = 100MHz, 17 pF 550 Cc.rbb' VCB = 6 V, IE = -1mA, f = 30 MHz Noise figure Max 23 MHz 25 ps 5 dB dB hFE Classification Marking QR QO QY hFE 40 80 70 140 100 200 www.kexin.com.cn 1