Transistors SMD Type NPN Silicon Epitaxia 2SC3618 Features World standard miniature package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 15 V Collector current IC 0.7 A Collector current (Pulse)* ICP 1.0 A Total power dissipation PT 2.0 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * PW 10ms,duty cycle 50%. Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 25V, IE=0 100 nA Emitter cutoff current IEBO VEB = 10V, IC=0 100 nA hFE VCE = 2.0V , IC = 300mA DC current gain * Testconditons Min Typ 800 3200 Collector-emitter saturation voltage * VCE(sat) IC = 300mA , IB = 3.0mA 0.16 0.3 V Base-emitter saturation voltage * VBE(sat) IC = 300mA , IB = 3.0mA 0.75 1.2 V Gain bandwidth product fT Output capacitance *. PW Cob VCE = 5.0V , IE = -300mA VCB = 10V , IE = 0, f = 1.0MHz 150 250 MHz 10 pF 350ìs,duty cycle 2% hFE Classification Marking UM UL hFE 800 1600 1200 2400 UK 2000 3200 www.kexin.com.cn 1