Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1114 Features World standard miniature package. High DC current gain hFE=135 to 600. Low VCE(sat): VCE(sat)=-0.3V at 1.5A Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -20 V Collector to emitter voltage VCEO -20 V Emitter to base voltage VEBO -6 V Collector current IC -2 A Collector current (pulse) * IC -3 A Total power dissipation PT 2 W Junction temperature Tj 150 Tstg -55 to +150 Storage temperature range * Pulsed: PW 10 ms, duty cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 16 V, IE = 0 Emitter cutoff current IEBO VEB = -6.0 V, IC = 0 DC current gain * hFE Min VCE = -2.0 V, IC = -100 mA 135 VCE = -2.0 V, IC = -2.0mA 40 Typ Max Unit -100 nA -100 nA 350 600 Collector saturation voltage * VCE(sat) IC = -1.5A, IB = -50 mA -0.3 -0.5 V Base saturation voltage * VBE(sat) IC = -1.5A, IB = -50 mA -1.05 -1.2 V -0.65 -0.68 -0.75 V VCE = -10 V, IE = 50 mA 180 MHz VCB = -10 V, IE = 0 , f = 1.0 MHz 60 pF Base-emitter voltage * VBE Gain bandwidth product fT Output capacitance * Pulsed: PW VCE = -6.0 V, IC = -100 mA Cob 350 ìs, duty cycle 2% hFE Classification Marking ZM ZL ZK hFE 135 270 200 400 300 600 www.kexin.com.cn 1