KEXIN 2SB804

Transistors
SMD Type
PNP Silicon Epitaxial Transistor
2SB804
Features
World standard miniature package:SOT-89
High collector to base voltage:VCBO
-100V
Excellent DC current gain linearity.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
-100
V
Collector to emitter voltage
VCEO
-80
V
Emitter to base voltage
VEBO
-5
V
Collector current
IC
-1
mA
Collector current(Pulse) *
IC
-1.5
mA
Total power dissipation
PT
2
W
Tj
150
Tstg
-55 to +150
Junction temperature
Storage temperature range
* PW
10ms,duty cycle 50%.
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = -100 V, IE = 0
Testconditons
-100
nA
Emitter cutoff current
IEBO
VEB = -5.0 V, IC = 0
-100
nA
DC current gain *
hFE
VCE = -2.0 V, IC = -100 mA
90
200
25
80
VCE(sat) IC = -500mA, IB = -50mA
Base saturation voltage *
VBE(sat) IC = -500mA, IB = -50mA
Gain bandwidth product
Output capacitance
* Pulsed: PW
-0.29
400
-0.5
V
-0.9
-1.5
V
-640
-700
mV
VBE
VCE = -10 V, IC = -10 mA
fT
VCE = -5.0 V, IE = 10 mA
80
MHz
VCB = -10 V, IE = 0 , f = 1.0 MHz
26
pF
Cob
350 ìs, duty cycle
Typ
VCE = -2.0 V, IC = -500 mA
Collector saturation voltage *
Base-emitter voltage *
Min
-600
2%
hFE Classification
Marking
AW
AV
AU
hFE
90 180
135 270
200 400
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