Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB804 Features World standard miniature package:SOT-89 High collector to base voltage:VCBO -100V Excellent DC current gain linearity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -100 V Collector to emitter voltage VCEO -80 V Emitter to base voltage VEBO -5 V Collector current IC -1 mA Collector current(Pulse) * IC -1.5 mA Total power dissipation PT 2 W Tj 150 Tstg -55 to +150 Junction temperature Storage temperature range * PW 10ms,duty cycle 50%. Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -100 V, IE = 0 Testconditons -100 nA Emitter cutoff current IEBO VEB = -5.0 V, IC = 0 -100 nA DC current gain * hFE VCE = -2.0 V, IC = -100 mA 90 200 25 80 VCE(sat) IC = -500mA, IB = -50mA Base saturation voltage * VBE(sat) IC = -500mA, IB = -50mA Gain bandwidth product Output capacitance * Pulsed: PW -0.29 400 -0.5 V -0.9 -1.5 V -640 -700 mV VBE VCE = -10 V, IC = -10 mA fT VCE = -5.0 V, IE = 10 mA 80 MHz VCB = -10 V, IE = 0 , f = 1.0 MHz 26 pF Cob 350 ìs, duty cycle Typ VCE = -2.0 V, IC = -500 mA Collector saturation voltage * Base-emitter voltage * Min -600 2% hFE Classification Marking AW AV AU hFE 90 180 135 270 200 400 www.kexin.com.cn 1