Transistors IC SMD Type Silicon NPN Epitaxial Planar 2SC3930 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit 0.1 ìA Collector-base cutoff current ICBO VCB = 10 V, IE = 0 Forward current transfer ratio hFE VCB = 10 V, IE = -1 mA 70 fT VCB = 10 V, IE = -1 mA, f = 200 MHz 150 Noise figure Nf VCB = 10 V, IE = -1 mA, f = 5 MHz 2.8 4.0 dB Reverse transfer impedance Zrb VCB = 10 V, IE = -1 mA, f = 2 MHz 22 50 Ù Reverse transfer capacitance Cre VCB = 10 V, IE = -1 mA, f = 10.7 MHz 0.9 1.5 pF Transition frequency 220 250 MHz hFE Classification Marking VB VC hFE 70 140 110 220 www.kexin.com.cn 1