Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD814,2SD814A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low noise voltage NV 1 0.55 High collector-emitter voltage VCEO +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Symbol 2SD814 VCBO 2SD814A Collector-emitter voltage 2SD814 VCEO 2SD814A Emitter-base voltage VEBO Rating Unit 150 V 185 V 150 V 185 V 5 V Collector current IC 50 mA Peak collector current ICP 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Collector-base cutoff current Collector-emitter voltage IC = 100 ìA, IB = 0 VCEO 2SD814A Emitter-base voltage VEBO Forward current transfer ratio hFE Collector-emitter saturation voltage Min Typ VCB = 100 V, IE = 0 ICBO 2SD814 Testconditons fT Unit 1 ìA 150 V 185 V IE = 10 ìA, IC = 0 5 VCE = 5 V, IC = 10 mA 90 V 330 VCE(sat) IC = 30 mA, IB = 3 mA Transition frequency Max 1 V VCE = 10 V, IC = -10 mA, f = 200 MHz 150 MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 2.3 pF Noise voltage NV VCE = 10 V, IC = 1 mA, GV = 80 dB Rg = 100 k? , Function = FLAT 150 mV hFE Classification Marking 2SD814 PQ PR PS 2SD814A LQ LR LS Rank Q R S hFE 90 155 130 220 185 330 www.kexin.com.cn 1