Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC4562 Features High transition frequency fT. Small collector output capacitance cob. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = 10 ìA, IE = 0 50 Collector-emitter voltage VCEO IC = 1 mA, IB = 0 50 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 5 V Collector cutoff current ICBO VCB = 10 V, IE = 0 Emitter cutoff current IEBO VCE = 10 V, IB = 0 Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA VCE(sat) IC = 10 mA, IB = 1 mA Collector-emitter saturation voltage Transition frequency fT Collector output capacitance Cob V 200 0.1 ìA 100 ìA 500 0.06 0.30 V VCB = 10 V, IE = -2 mA, f = 200 MHz 250 MHz VCB = 10 V, IE = 0, f = 1 MHz 1.5 pF hFE Classification AM Marking Rank Q R hFE 200 400 250 500 www.kexin.com.cn 1