Transistors IC SMD Type Silicon NPN Epitaxial 2SC2716 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Low noise figure: NF = 3.5dB (max) (f = 1 MHz). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V IC 100 mA Collector current Emitter current IE -100 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 20 V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 2 V, IC = 0 1.0 ìA DC current gain hFE VCE = 12 V, IC = 2 mA 40 240 Collector-emitter saturation voltage VCE (sat) IC = 10 mA, IB = 1 mA 0.4 V Base-emitter saturation voltage VBE (sat) IC = 10 mA, IB = 1 mA 1.0 V Transition frequency fT Collector output capacitance Cob Collector-base time constant Power gain VCE = 10V, IC = 2 mA 120 MHz 2.2 3.0 pF Cc.rbb' VCE = 10V, IE = -1 mA , f = 30 MHz 30 50 ps VCC = 10V, IE = -1 mA , f = 1 MHz, Rg=50Ù 2.0 3.5 dB Gpe VCB = 10V, IE = 0 , f = 1 MHz 80 hFE Classification Marking FR FO FY hFE 40 80 70 140 120 240 www.kexin.com.cn 1