Transistors SMD Type Silicon PNP Epitaxial 2SA1182 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT-23 package 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V IC -500 mA Collector current Base current IB -50 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = -35 V, IE = 0 -0.1 A Emitter cut-off current IEBO VEB = -5 V, IC = 0 -0.1 A DC current gain hFE VCE = -1 V, IC = -100 mA 70 VCE = -6 V, IC = -400 mA 25 VCE (sat) IC = -100 mA, IB = -10 mA Collector-emitter saturation voltage 240 -0.1 -0.25 V -0.8 -1.0 V Base-emitter voltage VBE VCE = -1 V, IC = -100 mA Collector output capacitance Cob VCB = -6 V, IE = 0, f = 1 MHz 13 pF VCE = -6 V, IC = -20 mA 200 MHz Transition frequency fT hFE Classification Marking ZO ZY Rank O Y hFE 70 140 120 240 www.kexin.com.cn 1 Transistors SMD Type 2SA1182 Typical Characteristics Fig.2 Collector Current Fig. 1 Collector Emitter Voltage Fig.3 Collector Current Fig.4 Ambient Temperature Fig.5 Base Emitter Voltage 2 www.kexin.com.cn