Transistors IC SMD Type Silicon PNP Epitaxial 2SA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 (IC =-500 mA, IB =-20 mA) 0.55 Low saturation voltage: VCE(sat) = -0.4V(max) +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain: hFE = 100 320 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 Suitable for driver stage of small motor 0-0.1 +0.1 0.38-0.1 Small package 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Base current IB -160 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = -30 V, IE = 0 -0.1 ìA Emitter cut-off current IEBO VEB = -50 V, IC = 0 -0.1 ìA Collector-emitter breakdown voltage V(BR) CEO IC = -10 mA, IB = 0 Emitter-base breakdown voltage V(BR) EBO IE = -0.1 mA, IC = 0 DC current gain hFE VCE = -1 V, IC = -100 mA -25 V -5 V 100 320 VCE (sat) IC = -500 mA, IB = -20 mA Collector-emitter saturation voltage -0.4 Base-emitter voltage VBE VCE = -1 V, IC = -10 mA Transition frequency fT VCE = -5 V, IC = -10 mA 120 MHz VCB = -10 V, IE = 0, f = 1 MHz 13 pF Collector output capacitance Cob -0.5 -0.8 V V hFE Classification Marking hFE IO 100 200 IY 160 320 www.kexin.com.cn 1