Transistors IC SMD Type Silicon NPN Epitaxial 2SC4118 Features Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 35 V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 ìA DC current gain hFE VCE = 1 V, IC = 100 mA 70 VCE = 6 V, IC = 400 mA 25 VCE (sat) IC = 100 mA, IB = 10 mA Collector-emitter saturation voltage 240 0.1 0.25 V 1.0 V Base-emitter voltage VBE VCE = 1 V, IC = 100 mA 0.8 Transition frequency fT VCE = 6 V, IC = 20 mA 300 MHz 7 pF Collector output capacitance Cob VCB = 6 V, IE = 0, f = 1 MHz hFE Classification Marking WO WY hFE 70 140 120 240 www.kexin.com.cn 1