Transistors SMD Type Silicon PNP Epitaxial Type Transistor 2SA1162 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High voltage and high current: VCEO = -50 V, IC = ?150 mA (max) 1 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low noise: NF = 1dB (typ.), 10dB (max) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Base current IB -30 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = -50 V, IE = 0 -0.1 A Emitter cut-off current IEBO VEB = -5 V, IC = 0 -0.1 A DC current gain hFE VCE = -6 V, IC = -2 mA 70 VCE (sat) IC = -100 mA, IB = -10 mA Collector-emitter saturation voltage Collector output capacitance Cob Noise figure NF VCB = -10 V, IE = 0, f = 1 MHz VCE = -6 V, IC = -0.1 mA, f = 1 kHz, 400 -0.1 -0.3 V 4 7 pF 1.0 10 dB Rg = 10 k Transition frequency fT VCE = -10 V, IC = -1 mA 80 MHz hFE Classification Marking SO SY SR Rank O Y GR hFE 70 140 120 240 200 400 www.kexin.com.cn 1 Transistors SMD Type 2SA1162 Fig.1 Collector emitter voltage Fig.2 Collector current Fig.3 Collector current Fig.5 Base emitter voltage Fig.4 Collector current Fig.6 Colleector current 2 www.kexin.com.cn Fig.7 Ambient temperature