Transistors SMD Type Silicon NPN Epitaxial Planar type 2SC4738 SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 1 +0.15 1.6-0.15 Features +0.05 0.8-0.05 0.55 2 +0.01 0.1-0.01 High voltage and high current:VCE=50V,IC=150mA(Max.) 0.35 3 Excellent hFE linearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) +0.25 0.3-0.05 High hFE: =120 to 700 0.5 +0.1 -0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 150 mA Collector current Base current IB 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cut-off current ICBO VCB=60 V, IE= 0 Emitter cut-off current IEBO VEB= 5 V, IC = 0 DC current gain hFE VCE= 6 V, IC = 2 mA VCE(sat) IC=100mA,IB=10mA Collector emitter saturation voltage Collector output capacitance cob Transition frequency Min 120 VCB=10V,IE=0,f=1MHz VCE = 10V, IC = 1mA fT Typ 80 Max Unit 0.1 A 0.1 A 700 0.1 0.25 2.0 3.5 V pF MHz hFE Classification Marking LY LGR LBL Rank Y GR BL hFE 120 240 200 400 350 700 www.kexin.com.cn 1