Transistors IC SMD Type Silicon NPN Epitaxial 2SC4116 Features High voltage and high current: VCEO = 50 V, IC = 150 mA (max). Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ). High hFE: hFE = 70 700. Low noise: NF = 1dB (typ.), 10dB (max). Small package. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 150 mA Collector current Base current IB 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 60V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 5V, IC = 0 0.1 ìA hFE VCE = 6V, IC = 2mA DC current gain Collector-emitter saturation voltage 70 VCE (sat) IC = 100mA, IB = 10mA Transition frequency fT VCE = 10V, IC = 1mA 700 0.1 0.25 80 V MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 2.0 3.5 pF Collector-emitter on resistance NF VCE = 6V, IC = 0.1mA, f = 1kHz, Rg = 10kÙ 1.0 10 dB hFE Classification Marking LO LY LG LL hFE 70 140 120 240 200 400 350 700 www.kexin.com.cn 1