Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC4226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise and high gain. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz +0.05 0.1-0.01 +0.1 0.97-0.1 High gain. 0-0.1 1.Base 2.Emitter +0.1 0.38-0.1 |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA 3.collector 1 Emitter 1 Emitter 22 Base Base 33 Collector Collecotr Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO 20 V Collector to emitter voltage VCEO 12 V Emitter to base voltage VEBO 3.0 V Collector current (DC) IC 100 mA power dissipation PC 150 mW Tj 150 Tstg -65 to +150 Junction temperature Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 10 V, IE = 0 1.0 A Emitter cutoff current IEBO VEB = 1.0 V, IC = 0 1.0 A DC current gain * hFE Insertion power gain 2 S21e VCE = 3V, IC = 7 mA 40 VCE = 3V, IC = 7 mA, f = 1 GHz 7 110 250 9 dB Noise figure NF VCE = 3 V, IC = 7 mA, f = 1 GHz 1.2 2.5 dB Reverse transfer capacitance Cre VCB = 3 V, IE = 0 , f = 1 MHz 0.7 1.5 pF Transition frequency VCE =3V, IC = 7 mA fT *. Pulse measurement: PW 350 s, Duty Cycle 3.0 4.5 GHz 2%. hFE Classification Marking Rank hFE R23 R23 40 80 R24 R24 70 140 R25 R25 125 250 www.kexin.com.cn www.kesenes.com 1