KEXIN 2SC4226

Transistors
SMD Type
NPN Silicon Epitaxial Transistor
2SC4226
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Low noise and high gain.
1
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz
+0.05
0.1-0.01
+0.1
0.97-0.1
High gain.
0-0.1
1.Base
2.Emitter
+0.1
0.38-0.1
|S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
3.collector
1 Emitter
1 Emitter
22 Base
Base
33 Collector
Collecotr
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector to base voltage
Parameter
VCBO
20
V
Collector to emitter voltage
VCEO
12
V
Emitter to base voltage
VEBO
3.0
V
Collector current (DC)
IC
100
mA
power dissipation
PC
150
mW
Tj
150
Tstg
-65 to +150
Junction temperature
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 10 V, IE = 0
1.0
A
Emitter cutoff current
IEBO
VEB = 1.0 V, IC = 0
1.0
A
DC current gain *
hFE
Insertion power gain
2
S21e
VCE = 3V, IC = 7 mA
40
VCE = 3V, IC = 7 mA, f = 1 GHz
7
110
250
9
dB
Noise figure
NF
VCE = 3 V, IC = 7 mA, f = 1 GHz
1.2
2.5
dB
Reverse transfer capacitance
Cre
VCB = 3 V, IE = 0 , f = 1 MHz
0.7
1.5
pF
Transition frequency
VCE =3V, IC = 7 mA
fT
*. Pulse measurement: PW
350
s, Duty Cycle
3.0
4.5
GHz
2%.
hFE Classification
Marking
Rank
hFE
R23
R23
40
80
R24
R24
70
140
R25
R25
125
250
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