KEXIN 2SC4117

Transistors
SMD Type
Silicon NPN Epitaxial
2SC4117
Features
High voltage
High hFE
Low noise
Small package
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
20
mA
Collector power dissipation
PC
100
mW
Junction temperature
Storage temperature range
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Max
Unit
Collector cut-off current
Parameter
Symbol
ICBO
VCB = 120 V, IE = 0
0.1
ìA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
ìA
hFE
VCE =6 V, IC = 2 mA
DC current gain
Testconditons
Min
Typ
200
700
VCE (sat) IC = 10 mA, IB = 1 mA
Collector-emitter saturation voltage
0.3
V
VCE = 6 V, IC = 1 mA
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
3.0
pF
Noise figure
NF
VCE=6 V, IC=0.1 mA, f=1kHz,RG=10 K
1.0
Transition frequency
fT
10
dB
hFE Classification
Marking
DG
DL
Rank
GR
BL
hFE
200 400
350 700
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