Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD1250 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 Low collector-emitter saturation voltage VCE(sat) +0.15 0.50 -0.15 +0.2 9.70 -0.2 High forward current transfer ratio hFE which has satisfactory linearity 3 .8 0 Features 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 200 V Collector-emitter voltage VCEO 150 V Emitter-base voltage V VEBO 6 Collector current IC 2 Peak collector current ICP 3 Collector power dissipation PC TC = 25 A 1.3 W 30 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 500 ìA, IE = 0 200 Collector-emitter voltage (Base open) VCEO IC =5 mA, IB = 0 150 V Emitter-base voltage (Collector open) VEBO IE = 500 ìA, IC = 0 6 V Collector-base cutoff current (Emitter open) ICBO VCB = 200 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO Forward current transfer ratio hFE Base-emitter voltage Collector-emitter saturation voltage Transition frequency V VEB = 4 V, IC = 0 VCE = 10 V, IC = 150 mA 60 VCE = 10 V, IC = 400 mA 50 50 ìA 50 ìA 240 VBE VCE = 10 V, IC = 400 mA 1.0 V VCE(sat) IC = 500 mA, IB = 50 mA 1.0 V fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz hFE Classification Rank Q P hFE 60 to 140 100 to 240 www.kexin.com.cn 1