Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD1823 Features High forward current transfer ratio hFE. Low collector-emitter saturation voltage VCE(sat). High emitter-base voltage VEBO. Low noise voltage NV. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 15 V Collector current IC 50 mA Peak collector current ICP 100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector-base voltage VCBO IC = 10 ìA, IE = 0 Min Typ Max 50 Unit V Collector-emitter voltage VCEO IC = 1 mA, IB = 0 40 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 15 V Collector-base cutoff current ICBO VCB = 20 V, IE = 0 Collector-emitter cutoff current ICEO VCE = 20 V, IB = 0 Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA VCE(sat) IC = 10 mA, IB = 1 mA Collector-emitter saturation voltage Transition frequency fT VCB = 10 V, IE = ?2 mA, f = 200 MHz 400 0.1 ìA 1 ìA 2000 0.05 120 0.20 V MHz hFE Classification 1Z Marking Rank R S T hFE 400 800 600 1200 1000 2000 www.kexin.com.cn 1