Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD1259;2SD1259A TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 Satisfactory linearity of forward current transfer ratio hFE. +0.15 0.50 -0.15 +0.2 9.70 -0.2 High forward current transfer ratio hFE. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-base voltage 2SD1259 VCBO 2SD1259A Collector-emitter voltage 2SD1259 Rating Unit 80 V 100 V 60 V 80 V VEBO 6 V Collector current IC 3 A Peak collector current ICP 6 A Base current IB 1 A 1.3 W 40 W VCEO 2SD1259A Emitter-base voltage Collector power dissipation Ta = 25 PC Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter voltage 2SD1259 VCEO Testconditons IC = 25 mA, IB = 0 2SD1259A Collector-base cutoff current 2SD1259 ICBO 2SD1259A Min Typ V 80 V VCB = 80 V, IE = 0 100 ìA 100 ìA 100 ìA 100 ìA ICEO VCE = 40 V, IB = 0 Emitter-base cutoff current IEBO VEB = 6 V, IC = 0 Forward current transfer ratio hFE VCE = 4 V, IC = 0.5 A 500 2500 VCE(sat) IC = 2 A, IB = 0.05 A Transition frequency VCE = 12 V, IC = 0.2 A, f = 10 MHz fT Unit VCB = 100 V, IE = 0 Collector-emitter cutoff current Collector-emitter saturation voltage Max 60 1.0 50 V MHz hFE Classification Rank Q P O hFE 500 1000 800 1500 1200 2500 www.kexin.com.cn 1