KEXIN 2SD875

Transistors
SMD Type
Silicon NPN Epitaxial Planar Type
2SD875
Features
Large collector power dissipation PC.
High collector-emitter voltage (Base open) VCEO.
Mini power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
0.5
A
Peak collector current
ICP
1
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC = 10 ìA, IE = 0
80
V
Collector-emitter voltage
VCEO
IC = 100 ìA, IB = 0
80
V
Emitter-base voltage
VEBO
IE = 10 ìA, IC = 0
5
Collector-base cutoff current
ICBO
VCB = 20 V, IB = 0
Forward current transfer ratio
hFE
VCE = 10 V, IC = 150 mA
V
130
0.1
ìA
330
?
Collector-emitter saturation voltage
VCE(sat) IC = 300 mA, IB = 30 mA
0.2
0.4
V
Base-emitter saturation voltage
VBE(sat) IC = 300 mA, IB = 30 mA
0.85
1.2
V
Transition frequency
fT
Collector output capacitance
Cob
VCB = 10 V, IE = -50 mA, f = 200 MHz
120
VCB = 10 V, IE = 0, f = 1 MHz
11
MHz
20
pF
hFE Classification
X
Marking
Rank
R
S
hFE
130 220
185 330
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