MOSFET SMD Type MOS Fied Effect Transistor 2SJ212 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 Features +0.1 2.50-0.1 Has low on-state resistance 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 MAX.@VGS=-1.0V,ID=-0.5A +0.1 0.44-0.1 +0.1 2.60-0.1 RDS(on)=3.0 MAX.@VGS=-4.0V,ID=-0.3A +0.1 0.80-0.1 RDS(on)=4.0 +0.1 4.00-0.1 Directly driven by Ics having a 5V poer supply. 1 Gate 1. Source Base 1. +0.1 0.40-0.1 +0.1 3.00-0.1 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VGS=0 VDSS -60 V VDS=0 VGSS 20 V ID 500 mA Gate to source voltage Drain current (DC) Drain current(pulse) * ID Power dissipation PD 2.0 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 ms; d A 1.0 W 50%. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=-60V,VGS=0 Gate leakage current IGSS VGS= Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance -2.2 VDS=-5.0V,ID=-0.3A 0.4 0.54 Yfs RDS(on) Ciss Coss Reverse transfer capacitance Turn-on delay time Max Unit -10 A 10 A -3.0 V s VGS=-4.0V,ID=-0.3A 1.5 4.0 VGS=-10V,ID=-0.5A 0.8 3.0 160 pF 100 pF Crss 25 pF td(on) 130 ns tr 380 ns 95 ns 140 ns td(off) Fall time 20V,VDS=0 -1.0 Input capacitance Turn-off delay time Typ VGS(off) VDS=-10V,ID=-1mA Output capacitance Rise time Min tf VDS=-5.0V,VGS=0,f=1MHZ VGS(on)=-4V,RG=10 0.3A RL=1.5 ,VDD=-5V,ID=-- Marking Marking PD www.kexin.com.cn 1